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PROFET(R) BTS650P
Smart Highside High Current Power Switch
Features
* Overload protection * Current limitation * Short circuit protection * Overtemperature protection * Overvoltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 1) * Low ohmic inverse current operation * Reverse battery protection * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection2) * Electrostatic discharge (ESD) protection
Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio
Vbb(AZ) 62 V VON(CL) 42 V Vbb(on) 5.0 ... 34 V RON 6.0 m IL(ISO) 70 A IL(SC) 130 A IL : IIS 14 000
TO-220AB/7
* Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits
Application
7 1
7
Standard
SMD
1
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded protection functions.
4 & Tab
Voltage source Overvoltage protection Current limit Gate protection
OUT R bb + V bb
1,2,6,7
IL
Voltage sensor
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Output Voltage detection Current Sense
3
IN
Load
ESD
Logic
I IN
Temperature sensor
IS
I IS
(R) PROFET
Load GND
VIN V IS
Logic GND
5
R IS
1
)
2)
With additional external diode. Additional external diode required for energized inductive loads (see page 9).
Semiconductor Group
Page 1 of 16
1998-Nov.-2
BTS650P
Pin 1 2 3 4 Symbol OUT OUT IN Vbb O O I Function Output to the load. The pins 1,2,6 and 7 must be shorted with each other 3 especially in high current applications! ) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection 4 instead of this pin ). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3)
+
5 6 7
IS OUT OUT
S O O
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for short circuit protection, Tj,start =-40 ...+150C: (see diagram on page 10) Load current (short circuit current, see page 5) Load dump protection VLoadDump = VA + Vs, VA = 13.5 V RI5) = 2 , RL = 0.54 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = 7.5 mH, 0 , see diagrams on page 10 Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Symbol Vbb Vbb
Values 42 34 self-limited 75 -40 ...+150 -55 ...+150 170 1.5 4 +15 , -250 +15 , -250
Unit V V A V C W J kV mA
IL VLoad dump6) Tj Tstg Ptot EAS VESD IIN IIS
Current through input pin (DC) Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8
3)
4)
5) 6)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.7 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Semiconductor Group
Page 2
1998-Nov.-2
BTS650P Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min --7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB8):
Values typ max -- 0.75 60 -33
Unit K/W
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see IL = 20 A, Tj = 25 C: measurement circuit page 7) VIN = 0, IL = 20 A, Tj = 150 C: IL = 90 A, Tj = 150 C: 9) Vbb = 6V , IL = 20 A, Tj = 150 C: Nominal load current10) (Tab to pins 1,2,6,7) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C 11) Nominal load current10), device on PCB8)) TA = 85 C, Tj 150 C VON 0.5 V, Maximum load current in resistive range (Tab to pins 1,2,6,7) VON = 1.8 V, Tc = 25 C: see diagram on page 13 VON = 1.8 V, Tc = 150 C: 12) Turn-on time IIN to 90% VOUT: to 10% VOUT: Turn-off time IIN RL = 1 , Tj =-40...+150C Slew rate on 12) (10 to 30% VOUT ) RL = 1 , TJ = 25 C Slew rate off 12) (70 to 40% VOUT ) RL = 1 , TJ = 25 C
RON
--
RON(Static) IL(ISO)
-55
4.4 7.9 -10 70
6.0 10.5 10.7 17 --
m
A
IL(NOM) IL(Max) ton toff
dV/dton -dV/dtoff
13.6 250 150 100 30 ---
17 ----0.7 1.1
---420 110 ---
A A s
V/s V/s
7) 8
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. 9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 C. 10) Not tested, specified by design. 11) TJ is about 105C under these conditions. 12) See timing diagram on page 14. )
Semiconductor Group
Page 3
1998-Nov.-2
BTS650P
Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 C: RON(inv) see diagram on page 10 Tj = 150 C: Nominal inverse load current (Pins 1,2,6,7 to Tab) IL(inv) VON = -0.5 V, Tc = 85 C11 Drain-source diode voltage (Vout > Vbb) -VON IL = - 20 A, IIN = 0, Tj = +150C Operating Parameters Operating voltage (VIN = 0) 9, 13) Undervoltage shutdown 14) Undervoltage start of charge pump see diagram page 15 Overvoltage protection15) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0 Tj = 150C:
-55 --
4.4 7.9 70 0.6
6.0 10.5 ---
m A V
Vbb(on) VbIN(u) VbIN(ucp) VbIN(Z) Ibb(off)
5.0 1.5 3.0 60 62 ---
-3.0 4.5 -66 15 25
34 4.5 6.0 --25 50
V V V V A
) If the device is turned on before a V -decrease, the operating voltage range is extended down to VbIN(u). bb For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit. 14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT Vbb - 3 V. 15) See also VON(CL) in circuit diagram on page 9.
13
Semiconductor Group
Page 4
1998-Nov.-2
BTS650P
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions Short circuit current limit (Tab to pins 1,2,6,7) VON = 12 V, time until shutdown max. 350 s Tc =-40C: Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 s
IL(SC) IL(SC) IL(SC) td(SC)
--65 80 14
110 130 115 -16.5
-180 -350 20
A
s V
Output clamp 16) (inductive load switch off)
IL= 40 mA: -VOUT(CL)
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
VON(CL) VON(SC) Tjt Tjt
39 -150 --
42 6 -10
47 ----
V V C K
Thermal overload trip temperature Thermal hysteresis
Reverse Battery 17 Reverse battery voltage ) -Vbb On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line
----
-5.4 8.9 120
32 7.0 12.3 --
V m
Rbb
) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 17) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (I IN = I IS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9.
16
Semiconductor Group
Page 5
1998-Nov.-2
BTS650P
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Diagnostic Characteristics Current sense ratio, static on-condition, kILIS = IL : IIS, VON < 1.5 V18), VIS 4.0 V see diagram on page 12
IL = 90 A,Tj =-40C: kILIS Tj =25C: Tj =150C: IL = 20 A,Tj =-40C: Tj =25C: Tj =150C: IL = 10 A,Tj =-40C: Tj =25C: Tj =150C: IL = 4 A,Tj =-40C: Tj =25C: Tj =150C: IIS,lim
12 500 12 500 11 500 12 500 12 000 11 500 12 500 11 500 11 500 11 000 11 000 11 200 6.5 --60 62 --
14 200 13 700 13 000 14 500 14 000 13 400 15 000 14 300 13 500 18 000 15 400 14 000 --2 -66 --
16 000 16 000 14 500 17 500 16 500 15 000 19 000 17 500 15 500 28 500 22 000 19 000 -0.5 ---500 mA A V s
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current
IIN = 0: IIS(LL) VIN = 0, IL 0: IIS(LH) Current sense overvoltage protection Tj =-40C: VbIS(Z) Ibb = 15 mA Tj = 25...+150C: 19) Current sense settling time ts(IS)
Input Input and operating current (see diagram page 13) IIN(on)
IN grounded (VIN = 0)
---
0.8 --
1.5 80
mA A
Input current for turn-off20)
IIN(off)
18)
If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 19) Not tested, specified by design. 20) We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb.
Semiconductor Group
Page 6
1998-Nov.-2
BTS650P Truth Table
Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H 22 Z) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 21 VON(Fold back) if VON>VON(SC), shutdown will occure Remark
L = "Low" Level H = "High" Level Overtemperature reset by cooling: Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
I bb VbIN 4 Vbb IL V bb RIN V
IN
RON measurement layout
VON
l 5.5mm
3
IN PROFET IS 5
OUT 1,2,6,7
Vbb force
I IS DS R IS VOUT
I IN
VbIS VIS
Out Force Sense contacts contacts (both out pins parallel)
Typical RON for SMD version is about 0.2 m less than straight leads due to l 2 mm
Two or more devices can easily be connected in parallel to increase load current capability.
21 22
) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. ) Power Transistor "OFF", potential defined by external impedance.
Semiconductor Group
Page 7
1998-Nov.-2
BTS650P
Input circuit (ESD protection)
V bb
Current sense status output
Vbb R bb
ZD IS
V
V V bIN
ZD
R bb
Z,IS
Z,IN
IN I
IN
I IS R
IS
VIS
V IN
When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ).
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...350 s).
+ Vbb
VZ,IS = 66 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS Vbb - 5 V should be less than . IL(M) / Kilis Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open.
Inductive and overvoltage output clamp
+ Vbb VZ1 VON
VON
VZG
OUT
OUT Logic unit Short circuit detection
DS IS
PROFET
VOUT
VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -19 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET.
Semiconductor Group
Page 8
1998-Nov.-2
BTS650P
Overvoltage protection of logic part
+ Vbb V R IN
Z,IN
Vbb disconnect with energized inductive load
Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA.
V
Z,IS
R bb
IN
Logic V OUT
IS
Version a:
V
PROFET
RV
Signal GND
bb IN
V
R IS
V Z,VIS
bb OUT
PROFET
Rbb = 120 typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used.
IS
V ZL
Reverse battery protection
- Vbb
Rbb
Version b:
V
IN OUT
bb IN
Vbb PROFET OUT
RIN
Logic
IS
Power Transistor
IS
DS
RL RV
Power GND
V Zb
D
Signal GND
RIS
RV 1 k, RIS = 1 k nominal. Add RIN for reverse battery protection in applications with Vbb above 1 1 1 16 V17); recommended value: + + = RIN RIS RV 0.1A 1 0.1A if DS is not used (or = if DS RIN |Vbb| - 12V |Vbb| - 12V is used). To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV.
Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a neccessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit:
V
bb IN
Vbb PROFET OUT
RL
IS
Semiconductor Group
Page 9
1998-Nov.-2
BTS650P
Inverse load current operation Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0
V bb
+ IN Vbb
- IL
PROFET IS OUT
L [H]
1000000
-
V OUT + IIS
V IN V IS
100000
-
R IS
10000
The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible!
1000
100
10
1 1A 10 A 100 A 1000 A
Inductive load switch-off energy dissipation
E bb E AS V V bb ELoad bb i L(t) IN PROFET OUT EL
IL [A]
Externally adjustable current limit
If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function.
Vbb
IS I ZL
{
L
IN
RIS
RL
ER
Energy stored in load inductance:
EL = 1/2*L*I L
While demagnetizing load inductance, the energy dissipated in PROFET is
IN
2
V bb
PROFET
OUT
EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
with an approximate solution for RL > 0 : IL* L IL*RL EAS= (V + |VOUT(CL)|) ln (1+ |V ) 2*RL bb OUT(CL)|
IN Signal
RV
IS
Rload
T1
Signal GND
CV
T2
R IS
Power GND
Semiconductor Group
Page 10
1998-Nov.-2
BTS650P
Options Overview Type BTS 550P 555 650P
X X X X 24 X) X X X24) X X
Overtemperature protection with hysteresis Tj >150 C, latch function23) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
switches off when VON>6 V typ. (when first turned on after approx. 180 s)
Overvoltage shutdown Output negative voltage transient limit
to Vbb - VON(CL) to VOUT = -19 V typ
) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 24) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
23
Semiconductor Group
Page 11
1998-Nov.-2
BTS650P
Characteristics
Current sense versus load current: IIS = f(IL), TJ= -40 ... +150 C IIS [mA] 7 6 5 max 4 16000 3 2 min 1 0 0 20 40 60 80 12000 10000 0 20 40 60 80 min 14000 typ 18000 max Current sense ratio: IIS = f(IL), TJ= 25 C kILIS 22000 20000
IL [A]
Current sense ratio: KILIS = f(IL),TJ = -40C kilis Current sense ratio: KILIS = f(IL),TJ = 150C kilis
IL [A]
30000 28000 26000 24000 22000 20000 18000 16000 14000 12000 10000 0 20 40 60 80
IL [A]
max
22000 20000 18000 16000 14000
typ min
max typ min
12000 10000 0 20
40
60
80
IL [A]
Semiconductor Group
Page 12
1998-Nov.-2
BTS650P
Typ. current limitation characteristic IL = f (VON, Tj ) Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA]
1.6 1.4 1.2
300 250 200 T J = 25C 150 100 50 0 0 VON(F B) 5 10 15 20 T J = -40C T J = 150C VON > VON(S C) only for t < td(S C) (otherwis e immediate s hutdown)
IL [A]
450 400 350
1 0.8 0.6 0.4 0.2 0 0 20 40 60 80
VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0
VbIN [V]
RON [mOhm]
14 12 10 8 6 25C 4 2 0 0 5 10 15 40 -40C Tj = 150C 85C static dynamic
Vbb [V]
Semiconductor Group
Page 13
1998-Nov.-2
BTS650P
Timing diagrams
Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load:
IIN
IIN
VOUT
90% t on dV/dton 10% t off
dV/dtoff
VOUT
IL
tslc(IS)
t slc(IS)
IL
Load 1
Load 2
IIS
t t
IIS
tson(IS)
t soff(IS)
The sense signal is not valid during a settling time after turn-on/off and after change of load current.
Figure 3a: Short circuit: shut down by short circuit detection, reset by IIN = 0.
Figure 2a: Switching motors and lamps:
IIN
IIN IL IL(SCp) VOUT td(SC)
IIL
IIS VOUT>>0 VOUT=0 t
IIS
t
Shut down remains latched until next reset via input.
Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6).
Semiconductor Group
Page 14
1998-Nov.-2
BTS650P
Figure 4a: Overtemperature Reset if TjIIN
IIS
VOUT
Auto Restart
Tj
t
Figure 6a: Undervoltage restart of charge pump, overvoltage clamp
VOUT
VIN = 0
VON(CL)
6
4
dynamic, short Undervoltage not below VbIN(u)
2
IIN = 0
V ON(CL)
0 0
VbIN(u)
VbIN(ucp)
Semiconductor Group
Page 15
1998-Nov.-2
BTS650P
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/7
BTS650P
Ordering code Q67060-S6308-A2
Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, D-81541 Munchen (c) Siemens AG 1998. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be 25 expressly authorised for such purpose! Critical components ) of the Semiconductor Group of Siemens AG, may only be used in life 26 supporting devices or systems ) with the express written approval of the Semiconductor Group of Siemens AG.
SMD TO 220AB/7, Opt. E3180 Ordering code
BTS650P E3180A T&R: Q67060-S6308-A4
Footprint:
10.8
9.4
16.15
4.6 0.47 0.8 8.42
25)
26)
A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.
Semiconductor Group
Page 16
1998-Nov.-2

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